RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS

[1] ANGRESS JF, 1964, 7 P INT C PHYS SEM P, P1116

[2] SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) : 573 - &

[3] BESERMAN R, 1970, P INT C THIN FILMS C

[4] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[5] CHANG J, 1970, 7 P INT C EL MICR, V2, P183

[6] Chittick R. C., 1970, J NON-CRYST SOLIDS, V3, P255

[7] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[8] THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 463 - +

[9] RAMAN AND VIBRONIC SPECTRA OF NITRITE ION IN ALKALI HALIDES [J]. PHYSICAL REVIEW B, 1970, 2 (04): : 1074 - &

[10] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[1] ANGRESS JF, 1964, 7 P INT C PHYS SEM P, P1116

[2] SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) : 573 - &

[3] BESERMAN R, 1970, P INT C THIN FILMS C

[4] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[5] CHANG J, 1970, 7 P INT C EL MICR, V2, P183

[6] Chittick R. C., 1970, J NON-CRYST SOLIDS, V3, P255

[7] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[8] THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 463 - +

[9] RAMAN AND VIBRONIC SPECTRA OF NITRITE ION IN ALKALI HALIDES [J]. PHYSICAL REVIEW B, 1970, 2 (04): : 1074 - &

[10] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134