THE ROLE OF FLUORINE TERMINATION IN THE CHEMICAL-STABILITY OF HF-TREATED SI SURFACES

被引:70
作者
SUNADA, T
YASAKA, T
TAKAKURA, M
SUGIYAMA, T
MIYAZAKI, S
HIROSE, M
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期
关键词
SILICON; OXIDATION; NATIVE OXIDE; FLUORINE TERMINATION; X-RAY PHOTOELECTRON SPECTROSCOPY;
D O I
10.1143/JJAP.29.L2408
中图分类号
O59 [应用物理学];
学科分类号
摘要
The principal role of silicon-fluorine bonds in the chemical nature of HF-etched Si surfaces has been investigated by angle-resolved X-ray photoelectron spectroscopy. The native oxide growth thickness and the fluorine coverage have been systematically measured as functions of HF concentration, pure water rinse time, air or N2 + O2 gas exposure time and gas phase H2O concentration. It is shown that the native oxide growth is strongly suppressed by the existence of Si-F bonds of about 0.12 monolayers on the surface. This is explained by a model in which Si-F bonds chemically stabilize the surface reactive sites such as atomic steps as supported by the result of the layer-by-layer oxidation of Si.
引用
收藏
页码:L2408 / L2410
页数:3
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