40 GHZ, LOW HALF-WAVE VOLTAGE TILINBO3 INTENSITY MODULATOR

被引：64

作者：

GOPALAKRISHNAN, GK ^{[1
]}

BULMER, CH ^{[1
]}

BURNS, WK ^{[1
]}

MCELHANON, RW ^{[1
]}

GREENBLATT, AS ^{[1
]}

机构：

[1] MARYLAND ADV DEV LAB,GREENBELT,MD 20770

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 09期

关键词：

OPTICAL MODULATION; ELECTROOPTICS;

D O I：

10.1049/el:19920522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 5 V half-wave voltage (V(pi)) electro-optic Ti:LiNbO3 intensity modulator with a -7.5 dB (electrical) optical response at 40 GHz is demonstrated at 1.3-mu-m. A thick electrode structure is used in conjunction with a thin substrate to achieve a near optical-microwave phase match and a broadband electrical response.

引用

页码：826 / 827

页数：2

共 6 条

[1] 40 GHZ ELECTRO-OPTIC MODULATOR WITH 7.5V DRIVE VOLTAGE
DOLFI, DW
NAZARATHY, M
JUNGERMAN, RL
[J]. ELECTRONICS LETTERS, 1988, 24 (09) : 528 - 529
[2] ELECTRICAL LOSS MECHANISMS IN TRAVELING-WAVE LINBO3 OPTICAL MODULATORS
GOPALAKRISHNAN, GK
BURNS, WK
BULMER, CH
[J]. ELECTRONICS LETTERS, 1992, 28 (02) : 207 - 209
[3] NEW TRAVELING-WAVE ELECTRODE MACH-ZEHNDER OPTICAL MODULATOR WITH 20 GHZ BANDWIDTH AND 4-7V DRIVING VOLTAGE AT 1-52-MU-M WAVELENGTH
KAWANO, K
KITOH, T
JUMONJI, H
NOZAWA, T
YANAGIBASHI, M
[J]. ELECTRONICS LETTERS, 1989, 25 (20) : 1382 - 1383
[4] OPTICAL-INTENSITY MODULATION TO 40 GHZ USING A WAVE-GUIDE ELECTROOPTIC SWITCH
KOROTKY, SK
EISENSTEIN, G
TUCKER, RS
VESELKA, JJ
RAYBON, G
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1631 - 1633
[5] MIYAMOTO H, 1991, JPN J APPL PHYS, V30, P1383
[6] SEINO M, 1990, ECOC THG15 PAP

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