LONG-WAVELENGTH PHONONS IN MIXED-VALENCE SEMICONDUCTOR SNIISNIVS3

被引：48

作者：

CHANDRASEKHAR, HR

MEAD, DG

机构：

[1] Department of Physics, University of Missouri-Columbia, Columbia

[2] Max-Planck Institut F̈r Festkörperforschung, Stuttgart

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.19.932

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of Raman scattering and infrared reflectivity studies of the mixed-valence ternary sulphide SnIISnIVS3 are presented. The infrared-active phonon frequencies and the dielectric constants for all the principal directions have been determined. A group-theoretical analysis of the full space group has been performed to identify the symmetries of the observed modes. Despite the complexity of the crystal structure, the observed spectra contain a relatively small number of modes. Qualitative arguments for this behavior are presented. © 1979 The American Physical Society.

引用

页码：932 / 937

页数：6

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