SURFACE PREMELTING OF CU(110)

被引:104
作者
BARNETT, RN
LANDMAN, U
机构
[1] School of Physics, Georgia Institute of Technology, Atlanta
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 07期
关键词
D O I
10.1103/PhysRevB.44.3226
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Disordering and melting of the surface of Cu(110) are investigated using molecular-dynamics simulations, in which the embedded-atom theory is used to describe the energetics and interatomic interactions. In addition, the bulk melting temperature and the properties of the crystal-to-melt interface at coexistence are studied. The surface region of the Cu(110) starts to disorder, via the generation of vacancies accompanied by the formation of an adlayer, at a temperature of about 900 K. At a temperature of congruent-to 1200 K (i.e., about 80 K below bulk melting), the development of a quasiliquid region, exhibiting liquidlike energetic, structural, and transport properties, is observed. Analysis of the results, motivated by Landau-Ginzburg (mean-field) theories of surface melting, shows that the thickness of the quasiliquid layer increases logarithmically as the temperature approaches the melting point, with a correlation length of 4.3 angstrom.
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页码:3226 / 3239
页数:14
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