GE-GAAS (110) INTERFACE - SELF-CONSISTENT CALCULATION OF INTERFACE STATES AND ELECTRONIC-STRUCTURE

被引：97

作者：

PICKETT, WE

LOUIE, SG

COHEN, ML

机构：

[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA

[2] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DIV MAT & MOLEC RES, BERKELEY, CA 94720 USA

来源：

PHYSICAL REVIEW LETTERS | 1977年 / 39卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.39.109

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：109 / 112

页数：4

相关论文

共 11 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE
BARAFF, GA
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240
[3] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES
DONNELLY, JP
MILNES, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +
[4] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES
FRENSLEY, WR
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 810 - 815
[5] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE
GOBELI, GW
ALLEN, FG
[J]. PHYSICAL REVIEW, 1965, 137 (1A): : A245 - &
[6] HARRISON WA, TO BE PUBLISHED
[7] SELF-CONSISTENT ELECTRONIC STATES FOR RECONSTRUCTED SI VACANCY MODELS
LOUIE, SG
SCHLUTER, M
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 13 (04): : 1654 - 1663
[8] Milnes AG, 1972, HETEROJUNCTIONS META
[9] NGE-PGAAS HETEROJUNCTIONS
RIBEN, AR
FEUCHT, DL
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1055 - &
[10] Sharma B.L., 1974, SEMICONDUCTOR HETERO