LATERAL DIFFUSION IN AG-SE THIN-FILM COUPLES

被引：22

作者：

JOHNSON, DB

BROWN, LC

机构：

[1] Department of Metallurgy, University of British Columbia, Vancouver 8, BC

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 01期

关键词：

D O I：

10.1063/1.1657020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study has been made of the diffusion of Ag along thin evaporated Se films using optical and transmission electron microscopy. The effect on the growth rate of varying both the Ag and Se film thicknesses and the temperature has been studied. Thin-film diffusion rates were considerably faster than in bulk diffusion couples, indicating some short-circuit diffusion mechanism. An important result of the investigation was the demonstration of a critical thickness ratio of Ag to Se which had to be exceeded in order for diffusion to occur. This critical ratio depended only on the stoichiometry of the Ag 2Se phase formed during diffusion. © 1969 The American Institute of Physics.

引用

页码：149 / &