PICOSECOND BACKSIDE OPTICAL-DETECTION OF INTERNAL SIGNALS IN FLIP-CHIP MOUNTED SILICON VLSI CIRCUITS

被引:9
作者
HEINRICH, HK
PAKDAMAN, N
PRINCE, JL
KENT, DS
CROPP, LM
机构
[1] IBM T.J. Watson Research Center, Yorktown Heights, NY
[2] IBM General Technology Division, Hopewell Junction, NY
关键词
23;
D O I
10.1016/0167-9317(92)90352-R
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present picosecond backside optical measurements of currents and voltages, propagation delays, and glitches in flip-chip mounted silicon IC's. These signals are shown to compare well with prior circuit simulations, but they showed additional features not easily simulated.
引用
收藏
页码:313 / 324
页数:12
相关论文
共 23 条
[1]  
Toh, Chuang, Chen, Warnock, A 23ps/2.1mW ECL Gate with an AC-Coupled Active Pull-Down Emitter-Follower Stage, IEEE J. Solid-State Circuits, 24, pp. 1301-1306, (1989)
[2]  
Fried, Havas, Lechaton, Logan, Paal, Totta, A VLSI Bipolar Metallization Design with Three-Level Wiring and Area Solder Connections, IBM J. Res. Dev., 26, pp. 362-371, (1982)
[3]  
Miller, Controlled Collapse Reflow Chip Joining, IBM Journal of Research and Development, 13, pp. 239-250, (1969)
[4]  
Goldmann, Totta, Area Array Solder Interconnections for VLSI, Solid State Tech., 26, pp. 91-97, (1983)
[5]  
Ranieri, Deutsch, Kopcsay, Arjavalingan, A Novel 24GHz Bandwidth Coaxial Probe, IEEE Trans. Inst. Meas., 39, pp. 504-507, (1990)
[6]  
Rabjohn, Wolczanski, Surridge, High-frequency wafer-probing techniques, Can. J. Phys., 65, pp. 850-855, (1987)
[7]  
Pastol, Halbout, May, Compeau, Noncontact Internal Waveform Measurements with Picosecond Time Resolution on a 0.5- μm CMOS SRAM, IEEE Electron Dev. Lett., 9 EDL, pp. 506-508, (1988)
[8]  
Valdmanis, Mourou, Gabel, Subpicosecond Electrical Sampling, IEEE Journal of Quantum Electronics, 19 QE, pp. 664-667, (1983)
[9]  
Ho, Chance, Bajorek, Acosta, The Thin-Film Module as a High Performance Semiconductor Package, IBM J. Res. Dev., 26, pp. 286-296, (1982)
[10]  
Heinrich, Bloom, Hemenway, Noninvasive sheet charge density probe for integrated silicon devices, Appl. Phys. Lett., 48, pp. 1066-1068, (1986)