3-DIMENSIONAL SIMULATION OF PROXIMITY PRINTING

被引：9

作者：

ARSHAK, A ^{[1
]}

KUNDU, NN ^{[1
]}

ARSHAK, K ^{[1
]}

GUPTA, SN ^{[1
]}

机构：

[1] UNIV LIMERICK,DEPT ELECTR & COMP ENGN,LIMERICK,IRELAND

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 14卷 / 01期

关键词：

PHOTOLITHOGRAPHY; PROXIMITY PRINTING; SIMULATION; NEAR-CONTACT PRINTING; SHADOW PRINTING; MICROLITHOGRAPHY;

D O I：

10.1016/0167-9317(91)90165-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The proximity printing process in photolithography can be simulated to compute the diffraction-induced variation in resist profile during exposure. The Fresnel approximation has been used to compute the aerial image profile assuming three apertures in close proximity. The resist is characterized by its contrast curve to generate the 3-dimensional resist image. A test mask was designed and fabricated to verify the simulation results. Experiments were performed to obtain resist images which were studied with a scanning electron microscope. We report an interactive procedure to approximately estimate the values of exposure dose and proximity gap. The match that was obtained between theory and experiment was extremely good.

引用

页码：41 / 58

页数：18

共 8 条

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[2] Pongratz, Demmeler, Ehrlich, Et al., Proc. SPIE Microlithography, (1989)
[3] Chaker, Lafontaine, Et al., Proc. SPIE Microlithography, (1988)
[4] O'Toole, Lue, Ray, Hewlett-Packard J., (1982)
[5] Rosilio, Rosilio, Serre, Microelectron. Eng., 8, 1-2, pp. 37-54, (1988)
[6] Arshak, Kundu, Gupta, Optical/Laser Microlithography, Proc. SPIE, 922, (1988)
[7] Mathur, Kundu, Gupta, IEEE Trans. Electron. Dev., 35, (1988)
[8] White, RCA Rev., 43, (1982)

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