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RAMAN SPECTRUM OF SEMICONDUCTING AND METALLIC VO2
被引:150
作者
:
SRIVASTAVA, R
论文数:
0
引用数:
0
h-index:
0
SRIVASTAVA, R
CHASE, LL
论文数:
0
引用数:
0
h-index:
0
CHASE, LL
机构
:
来源
:
PHYSICAL REVIEW LETTERS
|
1971年
/ 27卷
/ 11期
关键词
:
D O I
:
10.1103/PhysRevLett.27.727
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
引用
收藏
页码:727 / +
页数:1
相关论文
共 13 条
[1]
GROWTH OF VO2 SINGLE CRYSTALS BY CHEMICAL TRANSPORT REACTION
论文数:
引用数:
h-index:
机构:
BANDO, Y
NAGASAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Chemical Research, Kyoto University
NAGASAWA, K
KATO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Chemical Research, Kyoto University
KATO, Y
TAKADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Chemical Research, Kyoto University
TAKADA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1969,
8
(05)
: 633
-
&
[2]
INFRARED OPTICAL PROPERTIES OF VANADIUM DIOXIDE ABOVE AND BELOW TRANSITION TEMPERATURE
BARKER, AS
论文数:
0
引用数:
0
h-index:
0
BARKER, AS
VERLEUR, HW
论文数:
0
引用数:
0
h-index:
0
VERLEUR, HW
GUGGENHEIM, HJ
论文数:
0
引用数:
0
h-index:
0
GUGGENHEIM, HJ
[J].
PHYSICAL REVIEW LETTERS,
1966,
17
(26)
: 1286
-
+
[3]
BERGLUND CN, 1969, PHYS REV, V185, P1022, DOI 10.1103/PhysRev.185.1022
[4]
DEVLIN GE, TO BE PUBLISHED
[5]
DOMAIN STRUCTURE AND TWINNING IN CRYSTALS OF VANADIUM DIOXIDE
FILLINGHAM, PJ
论文数:
0
引用数:
0
h-index:
0
FILLINGHAM, PJ
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(12)
: 4823
-
+
[6]
GROWTH AND ELECTRICAL PROPERTIES OF VANADIUM DIOXIDE SINGLE CRYSTALS CONTAINING SELECTED IMPURITY IONS
MACCHESNEY, JB
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories Incorporated, Murray Hill
MACCHESNEY, JB
GUGGENHEIM, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories Incorporated, Murray Hill
GUGGENHEIM, HJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1969,
30
(02)
: 225
-
+
[7]
RAMAN STUDY OF SEMICONDUCTOR-METAL TRANSITION IN TI2O3
MOORADIA.A
论文数:
0
引用数:
0
h-index:
0
MOORADIA.A
RACCAH, PM
论文数:
0
引用数:
0
h-index:
0
RACCAH, PM
[J].
PHYSICAL REVIEW B,
1971,
3
(12):
: 4253
-
&
[8]
PRESENT POSITION OF THEORY AND EXPERIMENT FOR VO2
PAUL, W
论文数:
0
引用数:
0
h-index:
0
PAUL, W
[J].
MATERIALS RESEARCH BULLETIN,
1970,
5
(08)
: 691
-
&
[9]
RAMAN SPECTRA OF TIO2,MGF2,ZNF2,FEF2,AND MNF2
PORTO, SPS
论文数:
0
引用数:
0
h-index:
0
PORTO, SPS
FLEURY, PA
论文数:
0
引用数:
0
h-index:
0
FLEURY, PA
DAMEN, TC
论文数:
0
引用数:
0
h-index:
0
DAMEN, TC
[J].
PHYSICAL REVIEW,
1967,
154
(02):
: 522
-
&
[10]
PHOTOEMISSION FROM VO2
POWELL, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Murray Hill
POWELL, RJ
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Murray Hill
BERGLUND, CN
SPICER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Murray Hill
SPICER, WE
[J].
PHYSICAL REVIEW,
1969,
178
(03):
: 1410
-
+
←
1
2
→
共 13 条
[1]
GROWTH OF VO2 SINGLE CRYSTALS BY CHEMICAL TRANSPORT REACTION
论文数:
引用数:
h-index:
机构:
BANDO, Y
NAGASAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Chemical Research, Kyoto University
NAGASAWA, K
KATO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Chemical Research, Kyoto University
KATO, Y
TAKADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Chemical Research, Kyoto University
TAKADA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1969,
8
(05)
: 633
-
&
[2]
INFRARED OPTICAL PROPERTIES OF VANADIUM DIOXIDE ABOVE AND BELOW TRANSITION TEMPERATURE
BARKER, AS
论文数:
0
引用数:
0
h-index:
0
BARKER, AS
VERLEUR, HW
论文数:
0
引用数:
0
h-index:
0
VERLEUR, HW
GUGGENHEIM, HJ
论文数:
0
引用数:
0
h-index:
0
GUGGENHEIM, HJ
[J].
PHYSICAL REVIEW LETTERS,
1966,
17
(26)
: 1286
-
+
[3]
BERGLUND CN, 1969, PHYS REV, V185, P1022, DOI 10.1103/PhysRev.185.1022
[4]
DEVLIN GE, TO BE PUBLISHED
[5]
DOMAIN STRUCTURE AND TWINNING IN CRYSTALS OF VANADIUM DIOXIDE
FILLINGHAM, PJ
论文数:
0
引用数:
0
h-index:
0
FILLINGHAM, PJ
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(12)
: 4823
-
+
[6]
GROWTH AND ELECTRICAL PROPERTIES OF VANADIUM DIOXIDE SINGLE CRYSTALS CONTAINING SELECTED IMPURITY IONS
MACCHESNEY, JB
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories Incorporated, Murray Hill
MACCHESNEY, JB
GUGGENHEIM, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories Incorporated, Murray Hill
GUGGENHEIM, HJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1969,
30
(02)
: 225
-
+
[7]
RAMAN STUDY OF SEMICONDUCTOR-METAL TRANSITION IN TI2O3
MOORADIA.A
论文数:
0
引用数:
0
h-index:
0
MOORADIA.A
RACCAH, PM
论文数:
0
引用数:
0
h-index:
0
RACCAH, PM
[J].
PHYSICAL REVIEW B,
1971,
3
(12):
: 4253
-
&
[8]
PRESENT POSITION OF THEORY AND EXPERIMENT FOR VO2
PAUL, W
论文数:
0
引用数:
0
h-index:
0
PAUL, W
[J].
MATERIALS RESEARCH BULLETIN,
1970,
5
(08)
: 691
-
&
[9]
RAMAN SPECTRA OF TIO2,MGF2,ZNF2,FEF2,AND MNF2
PORTO, SPS
论文数:
0
引用数:
0
h-index:
0
PORTO, SPS
FLEURY, PA
论文数:
0
引用数:
0
h-index:
0
FLEURY, PA
DAMEN, TC
论文数:
0
引用数:
0
h-index:
0
DAMEN, TC
[J].
PHYSICAL REVIEW,
1967,
154
(02):
: 522
-
&
[10]
PHOTOEMISSION FROM VO2
POWELL, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Murray Hill
POWELL, RJ
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Murray Hill
BERGLUND, CN
SPICER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Murray Hill
SPICER, WE
[J].
PHYSICAL REVIEW,
1969,
178
(03):
: 1410
-
+
←
1
2
→