SHORT-TIME DIFFUSION OF ZINC IN SILICON FOR THE STUDY OF INTRINSIC POINT-DEFECTS

被引：13

作者：

BRACHT, H ^{[1
]}

STOLWIJK, NA ^{[1
]}

MEHRER, H ^{[1
]}

YONENAGA, I ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 27期

关键词：

D O I：

10.1063/1.106393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental procedure has been developed which permits accurate short-time diffusion anneals for diffusion periods as short as a few seconds. This method is applicable to diffusors which are volatile at the diffusion temperature. It will be illustrated for zinc diffusion into silicon which mainly takes place via the kick-out mechanism. Previous long-time diffusion studies have yielded the product C(I)eqD(I) of equilibrium concentration and diffusivity of Si self-interstitials(I) involved in the interstitial-substitutional exchange of Zn. The present short-time diffusion method enables us to determine C(I)eq and D(I) separately by comparing measured spreading-resistance profiles with computer simulations based on the kick-out model.

引用

页码：3559 / 3561

页数：3

共 8 条

[1] GOLD DIFFUSION IN SILICON BY RAPID OPTICAL ANNEALING - A NEW INSIGHT INTO GOLD AND SILICON INTERSTITIAL KINETICS [J].

BOIT, C ;

LAU, F ;

SITTIG, R .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (02) :197-205

[2] DIFFUSION AND SOLUBILITY OF ZINC IN DISLOCATION-FREE AND PLASTICALLY DEFORMED SILICON-CRYSTALS [J].

GRUNEBAUM, D ;

CZEKALLA, T ;

STOLWIJK, NA ;

MEHRER, H ;

YONENAGA, I ;

SUMINO, K .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01) :65-74

[3] SIMULATION OF CRITICAL IC FABRICATION PROCESSES USING ADVANCED PHYSICAL AND NUMERICAL-METHODS [J].

JUNGLING, W ;

PICHLER, P ;

SELBERHERR, S ;

GUERRERO, E ;

POTZL, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :156-167

[4]

Nowick, 1984, DIFFUSION CRYSTALLIN, P64

[5] HYDROGEN PASSIVATION AND THERMAL REACTIVATION OF ZINC DOUBLE ACCEPTORS IN SILICON [J].

STOLZ, P ;

PENSL, G ;

GRUNEBAUM, D ;

STOLWIJK, N .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4) :31-34

[6]

STOLZ P, 1989, THESIS U ERLANGEN NU

[7] POINT-DEFECTS, DIFFUSION-PROCESSES, AND SWIRL DEFECT FORMATION IN SILICON [J].

TAN, TY ;

GOSELE, U .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 37 (01) :1-17

[8] THE ELECTRICAL-PROPERTIES OF ZINC IN SILICON [J].

WEISS, S ;

BECKMANN, R ;

KASSING, R .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (02) :151-156

← 1 →