EVIDENCE OF TUNNEL-ASSISTED TRANSPORT IN NONDEGENERATE MOS AND SEMICONDUCTOR-OXIDE-SEMICONDUCTOR DIODES AT ROOM-TEMPERATURE

被引：32

作者：

KAR, S

ASHOK, S

FONASH, SJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.328056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3417 / 3421

页数：5

共 15 条

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