TERT-BUTYL-SUBSTITUTED VANADOCENE, (C(5)H(4)CME(3))(2)V - A PRECURSOR FOR MOCVD OF PURE VANADIUM CARBIDE

被引：12

作者：

DERRAZ, Y ^{[1
]}

CYRATHIS, O ^{[1
]}

CHOUKROUN, R ^{[1
]}

VALADE, V ^{[1
]}

CASSOUX, P ^{[1
]}

DAHAN, F ^{[1
]}

TEYSSANDIER, F ^{[1
]}

机构：

[1] UNIV PERPIGNAN,INST SCI & GENIE MAT & PROCEDES,F-66860 PERPIGNAN,FRANCE

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1995年 / 5卷 / 11期

关键词：

D O I：

10.1039/jm9950501775

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 [物理化学]; 081704 [应用化学];

摘要：

tert-Butyl-substituted vanadocene, (C(5)H(4)CMe(3))(2)V (1), is used as a precursor in the CVD preparation (740 degrees C under hydrogen at atmospheric pressure on steel substrates) of crystalline VC0.88 thin films, characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and electron probe microanalysis with wavelength dispersive spectroscopy (EPMA-WDS), which are not contaminated by graphitic carbon or oxygen. 1 was obtained by reaction of (C(5)H(4)CMe(3))Na with [(V2Cl3)(THF)(6)](2)(Zn2Cl6) and characterized by X-ray crystal structure analysis [monoclinic, P2(1)/n; a=6.164(1), b=11.263(2), c=11.842(2) Angstrom, beta=96.31(2)degrees; V=817.2(7) Angstrom(3); Z=2], A possible mechanism for the deposition of VC films from 1 is proposed.

引用

页码：1775 / 1778

页数：4

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