ANOMALOUS PENETRATION OF GA AND IN IMPLANTED IN SILICON

被引：7

作者：

BULTHUIS, K

机构：

[1] Philips Research Laboratories, N.V. Philips' Gloeilampenfabrieken, Eindhoven

来源：

PHYSICS LETTERS A | 1968年 / A 27卷 / 04期

关键词：

D O I：

10.1016/0375-9601(68)91085-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An increase of the penetration depth of Ga and In implanted in silicon is observed for increasing target temperatures. © 1968.

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页码：193 / &

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