SIMULTANEOUS KINETICS OF DROPS AND EXCITONS IN SILICON DURING DROP FORMATION

被引：11

作者：

COLLET, J ^{[1
]}

BARRAU, J ^{[1
]}

BROUSSEAU, M ^{[1
]}

MAAREF, H ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,DEPT PHYS,CNRS,PHYS SOLIDES LAB,F-31077 TOULOUSE,FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 80卷 / 02期

关键词：

D O I：

10.1002/pssb.2220800207

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：461 / 470

页数：10

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[7] INVESTIGATIONS OF CONDENSATION PHENOMENA OF ELECTRON-HOLE DROPS IN PURE GE [J].

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[9] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].

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