EXPERIMENTAL-STUDY OF MICROWAVE REFLECTION GAIN OF ALAS GAAS ALAS QUANTUM WELL STRUCTURES

被引:5
作者
STAPLETON, SP [1 ]
DEEN, MJ [1 ]
BEROLO, E [1 ]
HARDY, RHS [1 ]
机构
[1] COMMUN RES CTR,OTTAWA K2H 8S2,ONTARIO,CANADA
关键词
Microwave devices and components; Semiconductor devices and materials; Tunnel diodes; Tunnelling;
D O I
10.1049/el:19900056
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on microwave reflection gain measurements on single quantum well AIAs/GaAs/AIAs resonant tunnelling structures. Reflection gain against frequency measurements in the 0.050-26.5GHz range were performed. The equivalent negative high-frequency resistance and capacitance as a function of frequency were determined for a diode of area 49μm2. The point at which the reflection gain exceeds unity (0dB) is noted to be the onset of possible oscillations, and thus yields a negative resistance. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
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页码:84 / 85
页数:2
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