FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONS

被引：10

作者：

HSU, SL ^{[1
]}

LIU, LM ^{[1
]}

FANG, CH ^{[1
]}

YING, SL ^{[1
]}

CHEN, TL ^{[1
]}

LIN, MS ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,DEPT ELECTR ENGN,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 01期

关键词：

D O I：

10.1109/16.249423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Severe field inversion has been observed in the circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the inter-metal dielectrics and PEOX/PECVD nitride as the passivation layer. We have performed detailed studies to conclude that the field inversion is caused by the interaction between PETEOS and non-carbon-based SOG, triggered by the H+ released from PECVD nitride during the sintering. No field inversion is observed when PEOX/inorganic SOG/PEOX is used as the inter-metal dielectrics. The effect of field inversion on the circuit yield is also discussed.

引用

页码：49 / 53

页数：5