HIGHLY UNIFORM INGAAS/GAAS QUANTUM DOTS (SIMILAR-TO-15 NM) BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：216

作者：

OSHINOWO, J

NISHIOKA, M

ISHIDA, S

ARAKAWA, Y

机构：

[1] Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo 106

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the direct deposition of strained InGaAs-dot structures with a diameter of about 15 nm on GaAs surfaces by metalorganic chemical vapor deposition growth. High resolution scanning electron micrographs show highly uniform quantum-sized dots formed by the Stranski-Krastanow growth mode. The sharp photoluminescence emission band of buried dot structures indicates efficient carrier capture and a homogeneous heterointerface. The average dot size and area dot density can be controlled accurately by growth temperature, and InGaAs deposition thickness, respectively.

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页码：1421 / 1423

页数：3

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