A STUDY OF THE SI-AU-AG INTERFACE BY SURFACE TECHNIQUES

被引：16

作者：

CROS, A ^{[1
]}

SALVAN, F ^{[1
]}

DERRIEN, J ^{[1
]}

机构：

[1] FAC SCI LUMINY, CNRS, ERA 899, F-13288 MARSEILLE 9, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.329312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4757 / 4764

页数：8

共 32 条

[1]

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APPLIED PHYSICS LETTERS, 1980, 36 (04) :326-328

[4] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

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LINDAU, I ;

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SU, CY ;

SPICER, WE .

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[5]

CROS A, 1981, SURF SCI, V103, pL109, DOI 10.1016/0039-6028(81)90094-7

[6]

Cros A., 1980, J PHYS C SOLID STATE, V41, P795

[7]

CROS A, UNPUBLISHED

[8] ELECTRONIC AND CRYSTALLOGRAPHIC STRUCTURES OF SILVER ADSORBED ON SILICON (111) [J].

DERRIEN, J ;

LELAY, G ;

SALVAN, F .

JOURNAL DE PHYSIQUE LETTRES, 1978, 39 (16) :L287-L290

[9]

Fukushima J., 1974, J PHYS-PARIS, V35, pC4

[10] ELECTRONIC-STRUCTURE OF AG ADSORBED ON SI(111) - EXPERIMENT AND THEORY [J].

GASPARD, JP ;

DERRIEN, J ;

CROS, A ;

SALVAN, F .

SURFACE SCIENCE, 1980, 99 (01) :183-191

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