ADSORPTION OF CESIUM ON GALLIUM-ARSENIDE (110)

被引：86

作者：

DERRIEN, J ^{[1
]}

ARNAUDDAVITAYA, F ^{[1
]}

机构：

[1] UNIV AIX MARSEILLE 2,CNRS,CTR RECH MECANISMES CROISSANCE CRISTALLINE,UER LUMINY,F-13288 MARSEILLE 2,FRANCE

来源：

SURFACE SCIENCE | 1977年 / 65卷 / 02期

关键词：

D O I：

10.1016/0039-6028(77)90473-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：668 / 686

页数：19

共 23 条

[1]

CLARK A, 1970, THEORY ADSORPTION CA

[2]

Clemens H. J., 1975, Critical Reviews in Solid State Sciences, V5, P273, DOI 10.1080/10408437508243484

[3]

Dash J.G., 1975, FILMS SOLID SURFACES

[4] KINETICS OF THERMAL DESORPTION USING AUGER-ELECTRON SPECTROSCOPY APPLICATION TO CESIUM COVERED (110) GALLIUM-ARSENIDE [J].

DERRIEN, J ;

DAVITAYA, FA .

REVUE DE PHYSIQUE APPLIQUEE, 1976, 11 (03) :377-385

[5] ISOBAR, LOW-ENERGY ELECTRON-DIFFRACTION AND LOSS SPECTROSCOPY MEASUREMENTS OF CESIUM COVERED (110) GALLIUM-ARSENIDE [J].

DERRIEN, J ;

DAVITAYA, FA ;

BIENFAIT, M .

SOLID STATE COMMUNICATIONS, 1976, 20 (06) :557-560

[6]

DERRIEN J, 1976, THESIS U AIX MARSEIL

[7] STRUCTURE ANALYSIS OF ALKALI METAL ADSORPTION ON SINGLE CRYSTAL NICKEL SURFACES [J].

GERLACH, RL ;

RHODIN, TN .

SURFACE SCIENCE, 1969, 17 (01) :32-&

[8] DIFFERENT BONDING STATES OF CS AND O ON HIGHLY PHOTOEMISSIVE GAAS BY FLASH-DESORPTION EXPERIMENTS [J].

GOLDSTEIN, B ;

SZOSTAK, D .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :111-113

[9] LEED-AUGER CHARACTERIZATION OF GAAS DURING ACTIVATION TO NEGATIVE ELECTRON AFFINITY BY ADSORPTION OF CS AND O [J].

GOLDSTEIN, B .

SURFACE SCIENCE, 1975, 47 (01) :143-161

[10] PHOTOEMISSION STUDIES OF GAAS-CS INTERFACE [J].

GREGORY, PE ;

SPICER, WE .

PHYSICAL REVIEW B, 1975, 12 (06) :2370-2381

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