EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE

被引：52

作者：

RAICHOUDBURY, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 12期

关键词：

D O I：

10.1149/1.2411694

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Gallium arsenide is used in devices such as Gunn oscillators, high- voltage varactors, lasers, tunnel diodes, etc. Epitaxial techniques are being developed in which gallium arsenide with controlled doping is deposited from the vapor or liquid phase on gallium arsenide as well as sapphire substrates. In summary, the epitaxial GaAs produced from trimethyl gallium and arsine is of good quality metallographically, but requires some improvement in purity. The electric parameters such as mobility and net carrier concentrations of GaAs on sapphire are comparable with those of GaAs grown on semi- insulating GaAs substrates.

引用

页码：1745 / +

页数：1