INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR

[1] INVESTIGATION OF CURRENT-GAIN TEMPERATURE DEPENDENCE IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 117 - +

[2] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 732 - +

[3] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P136

[4] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[5] TANENBAUM M, 1956, AT&T TECH J, V35, P1

[6] CONCENTRATION-DEPENDENT DIFFUSION OF BORON AND PHOSPHORUS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2859 - &

[7] VOLFSON AA, 1967, SOV PHYS SEMICOND+, V1, P327

[8] WHITTIER RJ, 1968, INT ELECTRON DEVICES

[1] INVESTIGATION OF CURRENT-GAIN TEMPERATURE DEPENDENCE IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 117 - +

[2] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 732 - +

[3] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P136

[4] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[5] TANENBAUM M, 1956, AT&T TECH J, V35, P1

[6] CONCENTRATION-DEPENDENT DIFFUSION OF BORON AND PHOSPHORUS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2859 - &

[7] VOLFSON AA, 1967, SOV PHYS SEMICOND+, V1, P327

[8] WHITTIER RJ, 1968, INT ELECTRON DEVICES