HGBRXI2-X PHOTODETECTORS FOR USE IN SCINTILLATION SPECTROSCOPY

被引：14

作者：

SHAH, KS

MOY, LP

ZHANG, J

OLSCHNER, F

LUND, JC

SQUILLANTE, MR

机构：

[1] Radiation Monitoring Devices, Inc., Watertown, MA 02172

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 322卷 / 03期

关键词：

D O I：

10.1016/0168-9002(92)91223-V

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have characterized photodetection properties of a new ternary semiconductor, HgBrxI2-x. High quality crystals of HgBrxI2-x are produced using purified starting materials. These crystals are characterized by measuring their optical, electrical and crystallographic properties. Photodetectors are fabricated from these ternary crystals and these photodetectors are evaluated by measuring their quantum efficiency as a function of the wavelength of incident light and their performance as scintillation spectrometers. The dominant factors limiting the performance of these photodetectors are identified and the direction of the future research in order to overcome these limitations is also presented.

引用

页码：509 / 513

页数：5

共 11 条

[1]

BRICE JC, 1986, CRYSTAL GROWTH PROCE, P104

[2] LARGE AREA SILICON AVALANCHE PHOTODIODES FOR SCINTILLATION DETECTORS [J].