ABINITIO MOLECULAR-DYNAMICS STUDY OF DEFECTS ON THE RECONSTRUCTED SI(001) SURFACE

被引：46

作者：

IHARA, S ^{[1
]}

HO, SL ^{[1
]}

UDA, T ^{[1
]}

HIRAO, M ^{[1
]}

机构：

[1] HITACHI LTD,ADV RES LAB,HATOYAMA,SAITAMA 35003,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.65.1909

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a new defect model for the reconstructed Si(001) surface. Ab initio molecular-dynamics simulations at finite temperature show the existence of interstitial dimers which are recessed from the surface. These dimers and adjacent on-surface dimers are both symmetric. The possibility that missing dimer vacancies observed by scanning tunneling microscopy contain these new surface defects is pointed out. © 1990 The American Physical Society.

引用

页码：1909 / 1912

页数：4

共 36 条

[1]

ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6

[2] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].