POSITIVE HOLES IN MAGNESIUM-OXIDE - CORRELATION BETWEEN MAGNETIC, ELECTRIC, AND DIELECTRIC ANOMALIES

被引:23
作者
BATLLO, F
LEROY, RC
PARVIN, K
FREUND, F
FREUND, MM
机构
[1] SWISS FED INST TECHNOL,HPF,CH-8092 ZURICH,SWITZERLAND
[2] SAN JOSE STATE UNIV,DEPT PHYS,SAN JOSE,CA 95192
关键词
D O I
10.1063/1.347807
中图分类号
O59 [应用物理学];
学科分类号
摘要
Magnetic susceptibility measurements of high purity MgO single crystals (< 50-wt. ppm transition metals) by means of a vibrating-sample magnetometer shows an anomaly at 800 K. At the same temperature the electric conductivity increases anomalously, the static dielectric constant epsilon increases from 9 to almost-equal-to 150, a pronounced positive surface charge appears, and Fe2+ in the MgO matrix oxidizes to Fe3+. The data are consistent with O2(2-) (peroxy) defects, representing self-trapped, spin-paired positive holes at Mg2+ vacancy sites. Diamagnetic at low temperatures, the holes start to decouple their spins > 600 K, probably forming at first V0 centers (two O- at an Mg2+ vacancy), then V- centers (single O- at an Mg2+ vacancy), and releasing mobile O- states. These O- represent itinerant charge carriers on acceptor levels near the O 2p-dominated valence band and conduct by O-/O2- valency fluctuations. The O- concentration is of the order of 8 X 10(19) cm-3.
引用
收藏
页码:6031 / 6033
页数:3
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