PULSED LASER DEPOSITION OF HIGH-QUALITY LINBO3 FILMS ON SAPPHIRE SUBSTRATES

被引:74
作者
MARSH, AM
HARKNESS, SD
QIAN, F
SINGH, RK
机构
[1] Department of Materials Science and Engineering, University of Florida, Gainesville
关键词
D O I
10.1063/1.108530
中图分类号
O59 [应用物理学];
学科分类号
摘要
High quality lithium niobate thin films were deposited onto R-cut sapphire substrates (alpha-Al2O3) by the pulsed laser deposition method. To stabilize single phase LiNbO3, relatively high oxygen partial pressure was required. X-ray diffraction results of these films, fabricated at an oxygen pressure of 1 Torr, showed only (012) and (024) peaks from lithium niobate. The lowering of the oxygen partial pressure or addition of argon in the ambient gas resulted in formation of intermediary phases. The substrate temperature above 650-degrees-C did not have a significant effect on the thin-film quality. Optical measurements on the films deposited under a wide variety of chamber pressures indicated an index of refraction of 2.28, corresponding to the ideal value of bulk LiNbO3.
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页码:952 / 954
页数:3
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