PREOXIDE-CONTROLLED OXIDATION FOR VERY THIN OXIDE-FILMS

被引：17

作者：

MAKIHARA, K ^{[1
]}

TERAMOTO, A ^{[1
]}

NAKAMURA, K ^{[1
]}

KWON, MY ^{[1
]}

MORITA, M ^{[1
]}

OHMI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,MICROELECTR LAB,AOBA KU,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

VERY THIN OXIDE; PREOXIDE; ULTRACLEAN OXIDATION; INSULATING PERFORMANCE; RELIABILITY;

D O I：

10.1143/JJAP.32.294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very thin oxide films with high insulating performance and high reliability are formed by controlling preoxide growth with an ultraclean oxidation method during heating of the wafer to thermal oxidation temperature. The current level through the preoxide-controlled ultraclean oxide is lower than that through the oxide incorporating a thicker preoxide, and the preoxide-controlled ultraclean oxide has high reliability with respect to hot electron injection.

引用

页码：294 / 297

页数：4

共 10 条

[1]

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[2]

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[3]

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[4]

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[5]

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[6]

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[7]

OHKURA A, 1991, 1991 INT C SOL STAT, P559

[8] DEPENDENCE OF THIN-OXIDE FILMS QUALITY ON SURFACE MICROROUGHNESS [J].

OHMI, T ;

MIYASHITA, M ;

ITANO, M ;

IMAOKA, T ;

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[9]

OHMI T, 1988, PHYSICS CHEM SIO2 SI, P413

[10]

YABUMOTO N, 1991, JPN J APPL PHYS, V30, P419

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