QUALIFICATION OF A NEW DEFECT REVEALING ETCH FOR CDTE USING CATHODOLUMINESCENCE MICROSCOPY

被引：17

作者：

WATSON, CCR

DUROSE, K

BANISTER, AJ

OKEEFE, E

BAINS, SK

机构：

[1] UNIV DURHAM,DEPT CHEM,DURHAM DH1 3HP,ENGLAND

[2] PHILIPS INFRARED DEF COMPONENTS,SOUTHAMPTON,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90025-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The action of a new defect revealing etch comprising a saturated FeCl3 solution has been investigated. The etch was found suitable for use on (111)A, (111BAR)B and other surface orientations of CdTe, and (111)A and (111BAR)B. surfaces of Cd0.96Zn0.04Te. Direct correlations with cathodoluminescence and infra-red microscopy have shown the etch to successfully reveal twin boundaries, precipitates and dislocations. A background etch rate of approximately 2 mum min-1 has been measured.

引用

页码：113 / 117

页数：5

共 10 条

[1]

BAILAR JC, 1973, COMPREHENSIVE INORGA, V1, P1046

[2]

Chen J.S., 1990, U.S. Patent, Patent No. [4,897,152, 4897152]

[3] STRUCTURAL DEFECTS IN CDTE CRYSTALS GROWN BY 2 DIFFERENT VAPOR-PHASE TECHNIQUES [J].