1024 BIT BUBBLE MEMORY CHIP

被引：6

作者：

BOSCH, LJ

DOWNING, RA

KEEFE, GE

ROSIER, LL

TERLEP, KD

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL,NY 12533

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[3] IBM CORP,SYST PROD DIV,POUGHKEEPSIE,NY 12601

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1973年 / MAG9卷 / 03期

关键词：

D O I：

10.1109/TMAG.1973.1067585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：481 / 484

页数：4

共 9 条

[1]

ALMASI GS, 1972, NOV MAGN MAGN MAT C

[2]

BONYHARD PI, 1970, IEEE T MAGN, VMAG6, P447

[3]

FISCHER RF, 1971, IEEE T MAGN, VMAG7, P741

[4]

FOWLIS DC, 1972, 1971 P INT C MAGN MA, P240

[5] LIQUID-PHASE EPITAXIAL-GROWTH OF MAGNETIC GARNET FILMS BY ISOTHERMAL DIPPING IN A HORIZONTAL PLANE WITH AXIAL ROTATION [J].

GIESS, EA ;

KUPTSIS, JD ;

WHITE, EAD .

JOURNAL OF CRYSTAL GROWTH, 1972, 16 (01) :36-&

[6] RARE EARTH-YTTRIUM IRON-GALLIUM GARNET EPITAXIAL FILMS FOR MAGNETIC BUBBLE DOMAIN APPLICATIONS [J].

GIESS, EA ;

ARGYLE, BE ;

CALHOUN, BA ;

CRONEMEYER, DC ;

KLOKHOLM, E ;

MCGUIRE, TR ;

PLASKETT, TS .

MATERIALS RESEARCH BULLETIN, 1971, 6 (11) :1141-+

[7]

HORSTMANN RE, 1973, OVERLAY FABRICATION

[8]

STRAUSS W, 1972, 17 C MAGN MAGN MAT P, P235

[9]

VARNERIN LJ, 1972, IEEE T MAGN, VMAG8, P329

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