THEORETICAL-MODEL OF THE ANODIC-OXIDATION GROWTH-KINETICS OF SI AT CONSTANT VOLTAGE

被引：16

作者：

GHOWSI, K

GALE, RJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 03期

关键词：

D O I：

10.1149/1.2096759

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：867 / 871

页数：5

共 32 条

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