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TAILORED EMITTER, LOW-RESISTIVITY, ION-IMPLANTED SILICON SOLAR-CELLS

被引：14
作者：
MINNUCCI, JA
KIRKPATRICK, AR
MATTHEI, KW
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期
关键词：
D O I：
10.1109/T-ED.1980.19939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：802 / 806
页数：5
相关论文
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[3]   655-MV OPEN-CIRCUIT VOLTAGE, 17.6-PERCENT EFFICIENT SILICON MIS SOLAR-CELLS [J].
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[5]   PERFORMANCE LIMITATIONS OF SILICON SOLAR-CELLS [J].
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[6]  
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[7]   EMITTER CURRENT SUPPRESSION IN A HIGH-LOW-JUNCTION EMITTER SOLAR-CELL USING AN OXIDE-CHARGE-INDUCED ELECTRON ACCUMULATION LAYER [J].
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[8]  
WEINBERG L, 1979, 1979 SOL CELL HIGH E
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