ULTRASONIC TREATMENT OF GAP AND GAAS

被引：8

作者：

KLIMM, D ^{[1
]}

TIPPELT, B ^{[1
]}

PAUFLER, P ^{[1
]}

HAASEN, P ^{[1
]}

机构：

[1] UNIV GOTTINGEN,INST MET PHYS,D-37073 GOTTINGEN,GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mobile dislocations are introduced into samples of GaP:S and GaAs:Zn by uniaxial compression (epsilon(pl) = 1 to 5%) at 820 K. As TEM investigation shows, the resulting irregular dislocation network shows a tendency to rearrangement after a long term (N almost-equal-to 7 x 10(8)) ultrasonic treatment at a frequency of 100 kHz and a temperature between 400 and 600 K. The mechanical damping and modulus defect are in good agreement with the Granato-Lucke theory. Under fatigue conditions applied here, the dislocation structure can be changed by comparably low ultrasound stresses (sigma almost-equal-to 25 to 56 MPa) at low temperatures.

引用

页码：517 / 521

页数：5

共 6 条

[1]

BUCHINGER L, 1984, PHILOS MAG A, V50, P275, DOI 10.1080/01418618408244227

[2] THEORY OF MECHANICAL DAMPING DUE TO DISLOCATIONS [J].