PATTERN REPLICATION ACCURACY IN 1/1 SYNCHROTRON-RADIATION LITHOGRAPHY

被引：1

作者：

TANAKA, T

MORIGAMI, M

WATANABE, T

FUTAGAMI, M

OKADA, K

FUJIWARA, S

YAMAOKA, Y

HARADA, M

KANEDA, K

NISHINO, J

SUZUKI, S

机构：

[1] SORTEC Corporation, Tsukuba-shi, Ibaraki, 300-42

[2] SANYO Electric Co., Ltd., Tsukuba-shi, Ibaraki, 305

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 20卷 / 04期

关键词：

LITHOGRAPHY; SYNCHROTRON RADIATION LITHOGRAPHY; X-RAY MASK; RESIST; FRESNEL DIFFRACTION; X-RAY LITHOGRAPHY;

D O I：

10.1016/0167-9317(93)90006-Q

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The replicated pattern distortion for feature sizes down to 0.15 mum, characterized by pattern linearity, pattern density dependence, and corner rounding, is investigated in synchrotron radiation (SR) lithography. In the investigation, a highly accurate X-ray mask delineated by a focused ion beam, a chemically amplified resist, and a Fresnel diffraction model simulator are used. At a 15 mum mask-to-wafer gap, no pattern proximity effect is observed. The corner rounding radius due to Fresnel diffraction is approximately 0.04 mum.

引用

页码：277 / 289

页数：13

共 5 条

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