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ANISOTROPIC CARRIER MOBILITY DUE TO DISLOCATIONS IN III-V COMPOUNDS

被引：5
作者：
BOOYENS, H
VERMAAK, JS
PROTO, GR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 03期
关键词：
D O I：
10.1063/1.325058
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1173 / 1176
页数：4
相关论文
共 7 条
[1]   DISLOCATIONS AND PIEZOELECTRIC EFFECT IN 3-5 CRYSTALS [J].
BOOYENS, H ;
VERMAAK, JS ;
PROTO, GR .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :3008-3013
[2]   SCATTERING OF FREE CARRIERS DUE TO STRAIN FIELD OF SCREW DISLOCATIONS IN SEMICONDUCTORS [J].
FARVACQUE, JL ;
GERLACH, E .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 77 (02) :651-656
[3]   NEW METHOD FOR CALCULATING IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J].
GERLACH, E .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 61 (02) :K97-K100
[4]   SCATTERING OF ELECTRONS IN SEMICONDUCTORS BY A CHARGED DISLOCATION [J].
GERLACH, E .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 62 (01) :K43-K45
[5]  
READ WT, 1954, PHILOS MAG, V45, P775
[6]  
READ WT, 1954, PHILOS MAG, V45, P1119
[7]  
READ WT, 1955, PHILOS MAG, V46, P111
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