INFLUENCE OF FREE-ELECTRON DENSITY ON THE COHESIVE ENERGY IN CHEMICALLY PREPARED SNO2 FILMS

被引：12

作者：

DOGIL, B

FROISSART, F

HORODECKI, AJ

机构：

[1] Institute of Physics, University of Gdańsk

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1979年 / 12卷 / 06期

关键词：

D O I：

10.1088/0022-3727/12/6/015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model for the defect structure in tin dioxide crystal is presented. The change of cohesive energy due to the presence of a degenerate electron gas is discussed. A set-up for the preparation of thin films is described, and an improved analysis of the asymmetric X-ray pattern is shown. A decrease in the unit cell volume due to the increase of free-electron density is observed, as predicted.

引用

页码：919 / 926

页数：8

共 18 条

[1] THE USE OF IONIZATION POTENTIALS .1. IONIC RADII OF THE ELEMENTS
AHRENS, LH
[J]. GEOCHIMICA ET COSMOCHIMICA ACTA, 1952, 2 (03) : 155 - 169
[2] UBER DAS AUSHEILEN VON GITTERFEHLERN FRISCH AUFGEDAMPFTER CDS-SCHICHTEN(I)
BERGER, H
[J]. PHYSICA STATUS SOLIDI, 1961, 1 (07): : 739 - 757
[3] BRINDLEY GW, 1955, XRAY DIFFRACTION POL, P168
[4] EFFECTS OF ADDITIONS TO SNO2 THIN-FILMS
CARROLL, AF
SLACK, LH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1889 - 1893
[5] LUMINESCENCE AND CHARGE COMPENSATION IN SNO2 DOPED WITH RARE-EARTH IONS
CRABTREE, DF
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (11) : 1543 - 1551
[6] Dogil B., 1977, Kristall und Technik, V12, pK73, DOI 10.1002/crat.19770121214
[7] DORNER C, 1972, KRIST TECH, V7, P427
[8] ELECTRICAL PROPERTIES OF TELLURIUM THIN FILMS
DUTTON, RW
MULLER, RS
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10): : 1511 - +
[9] ANALYSIS OF FREE-ELECTRON DENSITY IN NONSTOICHIOMETRIC SNO2 CRYSTAL
HORODECKI, AJ
[J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (03): : 351 - 352
[10] JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133010, 10.1149/1.2132647, 10.1149/1.2133090]

← 1 2 →