TEMPERATURE-DEPENDENT PHOTOELECTRON DIFFRACTION OF THE SI(001) SURFACE

被引：5

作者：

FRAXEDAS, J ^{[1
]}

FERRER, S ^{[1
]}

COMIN, F ^{[1
]}

机构：

[1] EUROPEAN SYNCHROTRON RADIAT FACIL, F-38043 GRENOBLE, FRANCE

来源：

SURFACE SCIENCE | 1994年 / 307卷

关键词：

D O I：

10.1016/0039-6028(94)91491-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A high energy photoelectron diffraction (XPD) study of Si(001) at different temperatures reveals that at about 1400 K a surface phase transition occurs. It has been identified as being an incomplete melting transition. The thickness of the liquid film is estimated to be about 2 angstrom (or two atomic layers) on the basis of single-scattering cluster calculations.

引用

页码：775 / 780

页数：6

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