PREPARATION AND PROPERTIES OF EPITAXIAL FILMS OF FERROELECTRIC BI4TI3O12

被引：67

作者：

TAKEI, WJ

FORMIGONI, NP

FRANCOMBE, MH

机构：

[1] Westinghouse Research Laboratories

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 08期

关键词：

D O I：

10.1063/1.1652990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sputtered films of ferroelectric Bi4Ti3O12 have been prepared by using targets containing excess Bi to compensate for loss of Bi in the deposition process. Epitaxial growth has been achieved on MgO and epitaxial Pt substrates. Studies of dielectric properties suggest that the sputtered films are suitable for use in high-capacitance structures. Hysteresis measurements yield spontaneous polarization values for the epitaxial films which are in excellent agreement with those reported for bulk single crystals. © 1969 The American Institute of Physics.

引用

页码：256 / +

页数：1

共 8 条

[1] CRYSTAL CHEMISTRY OF PYROCHLORE [J].