LOW-TEMPERATURE ORGANOMETALLIC VAPOR-PHASE EPITAXY OF INSB USING THE NOVEL SB PRECURSOR TRIISOPROPYLANTIMONY

被引：36

作者：

STAUF, GT ^{[1
]}

GASKILL, DK ^{[1
]}

BOTTKA, N ^{[1
]}

GEDRIDGE, RW ^{[1
]}

机构：

[1] USN,CTR WEAP,CHINA LAKE,CA 93555

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.104346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InSb has been grown by organometallic vapor phase epitaxy using triisopropylantimony (TIPSb) and trimethylindium (TMIn) at temperatures as low as 300-degrees-C, the lowest yet reported for a stable Sb source. Unintentionally doped films were n type, and the best electronic transport result was obtained for a growth at 350-degrees-C yielding a 77 K carrier concentration of 3.7 X 10(16) cm-3 and mobility of 6.3 X 10(4) cm2/V s; these impurities are thought to be from the reagent grade chemicals used to synthesize the TIPSb. The morphology, growth rate, and transport properties of these films are reported as a function of growth temperature, molar ratios, and substrate (GaAs or InSb). By comparing these transport properties with Hall measurements of approximately 1-mu-m InSb epilayers on GaAs grown from trimethylantimony and TMIn, it was found that these properties were greatly improved because of the low-temperature epitaxy enabled by this source.

引用

页码：1311 / 1313

页数：3

共 9 条

[1] THE PREPARATION OF INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].