STM STUDY OF TRANSITION-METAL OXIDE

被引：10

作者：

OSHIO, T ^{[1
]}

SAKAI, Y ^{[1
]}

MORIYA, T ^{[1
]}

EHARA, S ^{[1
]}

机构：

[1] ION ENGN RES INST,HIRAKATA,OSAKA 57301,JAPAN

来源：

ULTRAMICROSCOPY | 1992年 / 42卷

关键词：

D O I：

10.1016/0304-3991(92)90352-K

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Atomic images of vanadium ions in a VO2 surface were successfully obtained by the use of a scanning tunneling microscope (STM) at sample bias voltages around -0.35 V, which is consistent with the V3d electron energy band scheme presented by Goodenough. In the insulating phase of VO2, a peak of gap states was found through the scanning tunneling spectroscopic (STS) measurement of the normalized conductance spectrum on vanadium ions. On the other hand, neither an energy gap nor the peak of the surface states was observed in the metallic phase of VO2.

引用

页码：744 / 748

页数：5

共 10 条

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