OVERLAY PERFORMANCE OF AN ADVANCED X-RAY STEPPER (XRS 200)

被引：2

作者：

GABELI, F

KUCINSKI, A

SIMON, K

SCHEUNEMANN, HU

机构：

[1] Fraunhofer-Institut für Mikrostrukturtechnik (IMT), D-1000 Berlin 33

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

Lithography - X-Ray - Optical Systems - X-Ray Apparatus - Performance;

D O I：

10.1016/0167-9317(92)90042-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stepper related contributions to the overlay budget, such as alignment accuracy and displacements during pattern replication were investigated. By improving the alignment system, a value of 70 nm (mean + 3-sigma) was realized. Displacement errors induced by the stepper mechanism during pattern replication found to be in the range of 35 nm (3-sigma). This value was improved using a wafer chuck with high flatness. Summerizing the results, the total overlay contribution of the stepper (including alignment) is 75 nm (mean + 3-sigma).

引用

页码：203 / 208

页数：6

共 6 条

[1] Arden, Microelectronic Engineering, 13, (1991)
[2] Trube, Bernt, Engler, Huber, Microcircuit Eng. Conference, Microcircuit Eng. Conference, (1991)
[3] Lochel, Chlebek, Grimm, Huber, Maciobetaek, Silicon Membrane Mask Blanks for X-Ray and Ion Projection Lithography, Japanese Journal of Applied Physics, 29, 11, (1990)
[4] Flamholz, Rippstein, X-ray stepper exposure system performance and status, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 8 B, 6, (1990)
[5] Simon, Gabeli, Rohrmoser, Seedorf, Scheunemann, Huber, Microelectronic Engineering, 13, (1991)
[6] Hughlett, Cooper, SPIE Symp. on Microlithography, (1991)

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