ANALYSIS OF SLOW-WAVE TRANSMISSION-LINES ON MULTILAYERED SEMICONDUCTOR STRUCTURES INCLUDING CONDUCTOR LOSS

被引：10

作者：

LIOU, JC ^{[1
]}

LAU, KM ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT ELECT & COMP ENGN,AMHERST,MA 01003

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1993年 / 41卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/22.234518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal lines on semiconductor devices and circuits sometimes show slow-wave phenomena. To determine signal transmission characteristics along the lines, the typical assumption that metal is perfectly conducting is not always valid. In this paper, we use a simple and accurate means to include metallic loss in spectral domain analysis of planar transmission lines built on multi-layer semiconducting media. Experimental results with a modulation-doped field-effect transistor structure and comparison with the calculations are presented.

引用

页码：824 / 829

页数：6

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