ELECTRON-MOBILITY IN DEGENERATE TELLURIUM DOPED IN0.53GA0.47AS LPE LAYERS

被引：4

作者：

CLAXTON, PA

SHIRAFUJI, J

HOUSTON, PA

ROBSON, PN

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 05期

关键词：

D O I：

10.1049/el:19820146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：213 / 214

页数：2

共 10 条

[1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[3] EFFECTIVE DISTRIBUTION COEFFICIENTS OF SOME GROUP-VI ELEMENTS IN INDIUM-PHOSPHIDE GROWN BY LIQUID-PHASE EPITAXY [J].

BROWN, KE .

SOLID-STATE ELECTRONICS, 1974, 17 (05) :505-507

[4] ANALYSIS OF POLAR OPTICAL SCATTERING OF ELECTRONS IN GAAS [J].

FORTINI, A ;

DIGUET, D ;

LUGAND, J .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3121-&

[5] THEORETICAL CALCULATIONS OF ELECTRON-MOBILITY IN TERNARY 3-5 COMPOUNDS [J].

HARRISON, JW ;

HAUSER, JR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :292-300

[6]

MARSH JH, 1980, COMPOSITIONAL DEPEND, P621

[7] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INXGA1-XAS [J].

NAHORY, RE ;

POLLACK, MA ;

DEWINTER, JC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :775-782

[8] ALLOY SCATTERING EFFECTS AND CALCULATED MOBILITY IN NORMAL-TYPE GA0.47IN0.53AS [J].

PEARSALL, TP .

ELECTRONICS LETTERS, 1981, 17 (04) :169-170

[9] ELECTRON TRANSPORT IN GAAS [J].

RODE, DL ;

KNIGHT, S .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2534-&

[10]

WILLARDSON RK, 1966, P INT S GAAS READING, P34

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