LOW-LOSS RIDGE OPTICAL WAVE-GUIDES IN QUATERNARY INGAALAS/INP GROWN BY MBE

被引：13

作者：

CINGUINO, P

GENOVA, F

MORASCA, S

RIGO, C

STANO, A

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 05期

关键词：

MOLECULAR BEAM EPITAXY - SEMICONDUCTING INDIUM COMPOUNDS - Growth;

D O I：

10.1049/el:19870166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-loss waveguiding at 1. 55 mu m wavelength in quaternary InGaAlAs grown on the InP by molecular-beam epitaxy is demonstrated. Ridge waveguides with lengths up to 1. 8 cm and widths between 1. 3 and 50 mu m have losses as low as 2. 2 db/cm, showing the potential of this material system for high-performance waveguide devices.

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页码：235 / 236

页数：2

相关论文

共 9 条

[1] PASSIVE OPTICAL GAINASP-INP WAVEGUIDES [J].

BORNHOLDT, C ;

DOLDISSEN, W ;

FRANKE, D ;

GROTE, N ;

KRAUSER, J ;

NIGGEBRUGGE, U ;

NOLTING, HP ;

SCHLAK, M ;

TIEDKE, I .

ELECTRONICS LETTERS, 1983, 19 (03) :81-82

[2] SINGLE-MODE OPTICAL WAVE-GUIDES AND PHASE MODULATORS IN THE INP MATERIAL SYSTEM [J].

DONNELLY, JP ;

DEMEO, NL ;

LEONBERGER, FJ ;

GROVES, SH ;

VOHL, P ;

ODONNELL, FJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (08) :1147-1151

[3] EFFECT OF INP SUBSTRATE THERMAL-DEGRADATION ON MBE INGAAS LAYERS [J].

GENOVA, F ;

PAPUZZA, C ;

RIGO, C ;

STANO, S .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :635-638

[4]

GENOVA F, IN PRESS J VAC SCI B

[5] LOW-LOSS OPTICAL-WAVEGUIDES IN MBE-GROWN GAAS/GAALAS HETEROSTRUCTURES [J].

HOUGHTON, AJN ;

ANDREWS, DA ;

DAVIES, GJ ;

RITCHIE, S .

OPTICS COMMUNICATIONS, 1983, 46 (3-4) :164-166

[6] LOW-LOSS GAAS OPTICAL WAVE-GUIDES [J].

INOUE, H ;

HIRUMA, K ;

ISHIDA, K ;

ASAI, T ;

MATSUMURA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) :2662-2668

[7] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP [J].

OLEGO, D ;

CHANG, TY ;

SILBERG, E ;

CARIDI, EA ;

PINCZUK, A .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :476-478

[8] OPTICAL WAVE-GUIDES IN IN0.52AL0.48AS GROWN ON INP BY MBE [J].

RITCHIE, S ;

SCOTT, EG ;

RODGERS, PM .

ELECTRONICS LETTERS, 1986, 22 (20) :1066-1068

[9]

STANO A, IN PRESS J ELECTROCH