STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE

被引：167

作者：

DINGLE, R

SHAKLEE, KL

LEHENY, RF

ZETTERSTROM, RB

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 01期

关键词：

D O I：

10.1063/1.1653730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5 / +

页数：1

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共 7 条

[1] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN SINGLE CRYSTALS
DINGLE, R
STOKOWSKI, SE
DEAN, PJ
ZETTERSTROM, RB
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 497 - +
[2] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN
DINGLE, R
ILEGEMS, M
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (03) : 175 - &
[3] DINGLE R, TO BE PUBLISHED
[4] OPTICALLY PUMPED THIN-PLATELET SEMICONDUCTOR LASERS
JOHNSON, MR
HOLONYAK, N
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3977 - +
[5] OPTICAL STUDIES OF PHONONS AND ELECTRONS IN GALLIUM NITRIDE
MANCHON, DD
BARKER, AS
DEAN, PJ
ZETTERSTROM, RB
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (15) : 1227 - +
[6] DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS
SHAKLEE, KL
LEHENY, RF
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (11) : 475 - &
[7] SHAKLEE KL, UNPUBLISHED