GALVANOMAGNETIC EFFECTS IN A SEMICONDUCTOR WITH 2 SETS OF SPHEROIDAL ENERGY SURFACES

被引：33

作者：

GLICKSMAN, M

机构：

来源：

PHYSICAL REVIEW | 1956年 / 102卷 / 06期

关键词：

D O I：

10.1103/PhysRev.102.1496

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1496 / 1501

页数：6

共 16 条

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[3] BROOKS H, COMMUNICATION
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[5] DRESSELHAUS, 1955, PHYS REV, V98, P368
[6] MAGNETORESISTANCE OF GERMANIUM-SILICON ALLOYS
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[7] SPECULATIONS ON THE ENERGY BAND STRUCTURE OF GE-SI ALLOYS
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[8] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[9] HERRING C, UNPUBLISHED
[10] SOME PROPERTIES OF GERMANIUM-SILICON ALLOYS
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CHRISTIAN, SM
[J]. PHYSICAL REVIEW, 1954, 95 (02): : 560 - 561