CHARACTERIZATION OF THIN-FILMS, INTERFACES AND SURFACES BY HIGH-RESOLUTION ELECTRON-MICROSCOPY

被引：9

作者：

SMITH, DJ ^{[1
]}

LI, ZG ^{[1
]}

LU, P ^{[1
]}

MCCARTNEY, MR ^{[1
]}

TSEN, SCY ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

ULTRAMICROSCOPY | 1991年 / 37卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0304-3991(91)90015-X

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Recent applications of high-resolution electron microscopy in our laboratory to the characterization of thin films, interfaces and surfaces are described. The information typically available using this technique about thin films is illustrated by studies of multiple quantum wells, metallic superlattices, magnetic films and X-ray optical elements. The problems associated with imaging interfaces are discussed by reference to siticon/silicide interfaces and grain boundaries in metals. Finally, recent observations of semiconductor surface reconstructions and beam-induced reactions at oxide surfaces are briefly summarized.

引用

页码：169 / 179

页数：11

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