INSITU PROBING AT THE GROWTH TEMPERATURE OF THE SURFACE-COMPOSITION OF (INGA)AS AND (INAL)AS

被引：100

作者：

GERARD, JM

机构：

[1] CNET, Laboratoire de Bagneux, F-92225 Bagneux

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 17期

关键词：

D O I：

10.1063/1.108318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A sudden shift from a bidimensional to a three-dimensional growth mode is observed when InAs is deposited by molecular-beam epitaxy on a pseudomorphic buffer layer grown on GaAs. The critical thickness for this shift is merely sensitive to the indium composition of the surface monolayer prior to growth. This property allows a direct in situ probing of the surface composition at the temperature of the growth. A detailed quantitative study of the surface segregation of indium atoms is performed for (InGa)As and (InAl)As alloys.

引用

页码：2096 / 2098

页数：3

共 11 条

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