REFRACTIVE-INDEXES OF ZNMGSSE ALLOYS LATTICE-MATCHED TO GAAS

被引：42

作者：

UKITA, M

OKUYAMA, H

OZAWA, M

ISHIBASHI, A

AKIMOTO, K

MORI, Y

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 15期

关键词：

D O I：

10.1063/1.110599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have experimentally investigated refractive indices n of ZnxMg1-xSySe1-y, using the ellipsometry method and reflection-spectrum measurement. The samples are epitaxial films of undoped ZnxMg1-xSySe1-y grown by molecular beam epitaxy on semi-insulating GaAs substrates. The obtained dispersion relations of n in the transparent region are classified by the band-gap energy E(g). We have found that the refractive index n of ZnxMg1-xSySe1-y decreases as E(g) increases. These results will be available for the design of blue laser diodes containing ZnMgSSe.

引用

页码：2082 / 2084

页数：3

共 7 条

[1] OPTICAL-PROPERTIES OF ZNSE [J].

ADACHI, S ;

TAGUCHI, T .

PHYSICAL REVIEW B, 1991, 43 (12) :9569-9577

[2]

[Anonymous], 1985, HDB OPTICAL CONSTANT

[3] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

OKUYAMA, H ;

NAKANO, K ;

MIYAJIMA, T ;

AKIMOTO, K .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :139-143

[4] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

OKUYAMA, H ;

NAKANO, K ;

MIYAJIMA, T ;

AKIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1620-L1623

[5] ZNSE/ZNMGSSE BLUE LASER DIODE [J].

OKUYAMA, H ;

MIYAJIMA, T ;

MORINAGA, Y ;

HIEI, F ;

OZAWA, M ;

AKIMOTO, K .

ELECTRONICS LETTERS, 1992, 28 (19) :1798-1799

[6]

OZAWA M, UNPUB

[7]

PIKHTIN AN, 1988, SOV PHYS SEMICOND+, V22, P613

← 1 →