ADSORPTION OF CS ON TUNGSTEN - MEASUREMENTS ON SINGLE-CRYSTAL PLANES

被引：45

作者：

SIDORSKI, Z

PELLY, I

GOMER, R

机构：

[1] James Franck Institute, Department of Chemistry, University of Chicago, Chicago

[2] Institute of Experimental Physics, University of Wroclaw, Wroclaw

来源：

JOURNAL OF CHEMICAL PHYSICS | 1969年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.1671392

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorption of immobilely deposited and thermally equilibrated Cs layers has been studied on the (110), (211), (100), (111), (103), and (115) regions of a tungsten field emitter. The work-function-vscoverage data permit resolution into adsorbate charge and effective dipole length, at least on the high work-function planes. The results indicate ionic adsorption on (110) and probably (211) at low coverage, with charge diminishing on all planes as θ increases. Dipole lengths exceed the ionic radius of Cs by 1.4-2 Å, indicating the effect of finite screening at the metal surface. The adsorption energies and their change with θ can be interpreted in terms of metallet" model."

引用

页码：2382 / &

共 14 条

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[7] LEE TD, PRIVATE COMMUNICATIO
[8] WORK FUNCTION OF TUNGSTEN SINGLE CRYSTAL PLANES MEASURED BY THE FIELD EMISSION MICROSCOPE
MULLER, EW
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[10] OVCHINNIKOV AP, 1966, FIZ TVERD TELA, V8, P1493

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