DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS

被引：78

作者：

AGARWALA, BN

ATTARDO, MJ

INGRAHAM, AP

机构：

来源：

关键词：

D O I：

10.1063/1.1658395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3954 / &

共 12 条

[1] AINSLIE NG, PRIVATE COMMUNICATIO
[2] ATTARDO MJ, 1968, IEEE RELIABILITY PHY
[3] ELECTROMIGRATION IN THIN AL FILMS
BLECH, IA
MEIERAN, ES
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 485 - &
[4] BLECH IA, 1967, J APPL PHYS LETT, V11, P263
[5] GUTTMAN I, 1965, INTRODUCTORY ENGINEE, P210
[6] ELECTROMIGRATION EFFECTS IN ALUMINUM FILM ON SILICON SUBSTRATES
HOWARD, JK
ROSS, RF
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (03) : 85 - &
[7] CURRENT-INDUCED MARKER MOTION IN GOLD WIRES
HUNTINGTON, HB
GRONE, AR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) : 76 - 87
[8] HUNTINGTON HB, 1963, J PHYS SOC JAPAN S2, V18, P202
[9] MUTTER WE, 1967, ELECTROCHEMICAL SOC, P96
[10] POLLARD RD, PRIVATE COMMUNICATIO